OUR VISION
We are addressing a large high power module market today, with high growth predicted by industry analysts from $3 billion annual revenue in 2018 projected to grow to $4 billion by 2022. This market is dominated by legacy Si-based and some new SiC-based Insulated Gate Bipolar Transistors (IGBTs) used to deliver high power.
SiC BJTs have not been adopted by the WBG power module design community to date, which designs either IGBTs or in some cases MOSFETS into target applications with appropriate drivers. Until recently three fundamental development challenges prevented the adoption of conductivity modulated WBG power semiconductors - materials quality, manufacturing capability, and drivers.
Our team has deep circuits, devices, and driver knowledge, as well as proven 15 kV SiC BJT lab prototyping success. We know these challenges can now be overcome. Our goal is to commercialize high power BJTs, initially from 45 kW to 600 kW. Our BJTs will deliver high voltage or high current or both, depending on customer requirements. We design-to-customer to achieve initial design wins and to build our product line.
